Wide Bandgap Electronics Group
Wide Bandgap Electronics Group
Team
Publications
News & Media Coverage
Invited Talk
Capabilities & Equipments
Contact
Bixuan Wang
Latest
Dynamic Reliability of IC-Interface GaN HEMTs Demonstrated Under Ultra-Fast (ns), High-Frequency (MHz) Gate Overvoltage Stress (>30V)
Stability Improvement of GaN Power HEMT by a Multi-Functional Monolithic Protection Circuit
Cite
×