Wide Bandgap Electronics Group
Wide Bandgap Electronics Group
Team
Publications
News & Media Coverage
Invited Talk
Capabilities & Equipments
Contact
Liyang Jin
Latest
First Demonstration of Optically-Controlled 650 V Power GaN HEMT with Ultrafast Switching Speed
First Characterization of GaN Power Device and IC at Deep Cryogenic Temperatures down to 100 mK
Optically-Controlled 3.3 kV SiC MOSFET with Fast Switching Speed and Low Optical Power
Cite
×