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Matthew Porter

In-situ Measurement and Physical Mechanism of Dynamic RON in GaN-on-Si Monolithic Half-Bridge Power IC
First Characterization of Si IGBT, SiC MOSFET, and GaN HEMT at Deep Cryogenic Temperatures down to 10 Millikelvins
First Demonstration of Optically-Controlled 650 V Power GaN HEMT with Ultrafast Switching Speed
First Characterization of GaN Power Device and IC at Deep Cryogenic Temperatures down to 100 mK
Optically-Controlled 3.3 kV SiC MOSFET with Fast Switching Speed and Low Optical Power
Robust Avalanche (1.5 kV, 2 kA/cm2) in Vertical GaN Diodes on Patterned Sapphire Substrate
Enhancement-mode GaN Monolithic Bidirectional Switch with Breakdown Voltage over 3.3 kV

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