Ming Xiao

Termination structures for semiconductor devices (pending)
Robust Avalanche (1.5 kV, 2 kA/cm2) in Vertical GaN Diodes on Patterned Sapphire Substrate
Enhancement-mode GaN Monolithic Bidirectional Switch with Breakdown Voltage over 3.3 kV
Power Schottky barrier diodes with high breakdown voltage and low leakage current
Charge balanced power Schottky barrier diodes
Charge balanced power transistors (pending)
Heterogeneous superjunction devices (pending)
Monolithic cascode multi-channel high electron mobility transistors (pending)
Heterogeneous termination structures for semiconductor devices (pending)

Published with Hugo Blox Builder — the free, open source website builder that empowers creators.