Search

Qihao Song

Dynamic Reliability of IC-Interface GaN HEMTs Demonstrated Under Ultra-Fast (ns), High-Frequency (MHz) Gate Overvoltage Stress (>30V)
Robust Avalanche (1.5 kV, 2 kA/cm2) in Vertical GaN Diodes on Patterned Sapphire Substrate
Enhancement-mode GaN Monolithic Bidirectional Switch with Breakdown Voltage over 3.3 kV
Impact of Substrate Bias on the Stability of Bidirectional GaN HEMT in Hard-and Soft-Switching
Stability Improvement of GaN Power HEMT by a Multi-Functional Monolithic Protection Circuit

Published with Hugo Blox Builder — the free, open source website builder that empowers creators.