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Wide Bandgap Electronics Group
Wide Bandgap Electronics Group
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    Xin Yang

    Xin Yang

    Ph.D. Student

    HKU

      I am Xin Yang!

      Education
      • Ph.D. in Electrical and Electronic Engineering, now

        University of Hong Kong 

      • M.S. in Electrical Engineering, 2023

        Xi'an Jiaotong University

      • B.S. in Electrical Engineering, 2020

        Chongqing University

      Latest

      • In-situ Measurement and Physical Mechanism of Dynamic RON in GaN-on-Si Monolithic Half-Bridge Power IC
      • First Characterization of Si IGBT, SiC MOSFET, and GaN HEMT at Deep Cryogenic Temperatures down to 10 Millikelvins
      • First Demonstration of Optically-Controlled 650 V Power GaN HEMT with Ultrafast Switching Speed
      • Dynamic Reliability of IC-Interface GaN HEMTs Demonstrated Under Ultra-Fast (ns), High-Frequency (MHz) Gate Overvoltage Stress (>30V)
      • Switching Reliability of NiO/Ga2O3 Bipolar Junction Evaluated by a Circuit Method
      • First Characterization of GaN Power Device and IC at Deep Cryogenic Temperatures down to 100 mK
      • Optically-Controlled 3.3 kV SiC MOSFET with Fast Switching Speed and Low Optical Power
      • Reliability of NiO/β-Ga2O3 bipolar heterojunction
      • Stability Improvement of GaN Power HEMT by a Multi-Functional Monolithic Protection Circuit

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