Xin Yang
M.S. Xi'an Jiaotong University
B.S. Chongqing University
I am Xin Yang!
Latest
- In-situ Measurement and Physical Mechanism of Dynamic RON in GaN-on-Si Monolithic Half-Bridge Power IC
- First Characterization of Si IGBT, SiC MOSFET, and GaN HEMT at Deep Cryogenic Temperatures down to 10 Millikelvins
- First Demonstration of Optically-Controlled 650 V Power GaN HEMT with Ultrafast Switching Speed
- Dynamic Reliability of IC-Interface GaN HEMTs Demonstrated Under Ultra-Fast (ns), High-Frequency (MHz) Gate Overvoltage Stress (>30V)
- Switching Reliability of NiO/Ga2O3 Bipolar Junction Evaluated by a Circuit Method
- First Characterization of GaN Power Device and IC at Deep Cryogenic Temperatures down to 100 mK
- Optically-Controlled 3.3 kV SiC MOSFET with Fast Switching Speed and Low Optical Power
- Reliability of NiO/β-Ga2O3 bipolar heterojunction
- Stability Improvement of GaN Power HEMT by a Multi-Functional Monolithic Protection Circuit