Wide Bandgap Electronics Group
Wide Bandgap Electronics Group
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Zineng Yang
M.Sc. RWTH Aachen University
B.Eng. (Hons) University of Nottingham Ningbo/University of Nottingham
I am Zineng Yang!
Latest
In-situ Measurement and Physical Mechanism of Dynamic RON in GaN-on-Si Monolithic Half-Bridge Power IC
First Characterization of Si IGBT, SiC MOSFET, and GaN HEMT at Deep Cryogenic Temperatures down to 10 Millikelvins
First Demonstration of Optically-Controlled 650 V Power GaN HEMT with Ultrafast Switching Speed
Dynamic Stability and Reliability of Multi-Kilovolt GaN Monolithic Bidirectional HEMT
Switching Reliability of NiO/Ga2O3 Bipolar Junction Evaluated by a Circuit Method
First Characterization of GaN Power Device and IC at Deep Cryogenic Temperatures down to 100 mK
Robust Avalanche (1.5 kV, 2 kA/cm2) in Vertical GaN Diodes on Patterned Sapphire Substrate
Reliability of NiO/β-Ga2O3 bipolar heterojunction
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