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Wide Bandgap Electronics Group
Wide Bandgap Electronics Group
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    Zineng Yang

    Zineng Yang

    Ph.D. Student

    HKU

      I am Zineng Yang!

      Education
      • Ph.D. in Electrical and Electronic Engineering, now

        University of Hong Kong 

      • M.Sc. in Electrical Engineering and Information Technology, 2023

        RWTH Aachen University

      • B.Eng. (Hons) in Electrical and Electronic Engineering, 2018

        University of Nottingham Ningbo/University of Nottingham

      Latest

      • In-situ Measurement and Physical Mechanism of Dynamic RON in GaN-on-Si Monolithic Half-Bridge Power IC
      • First Characterization of Si IGBT, SiC MOSFET, and GaN HEMT at Deep Cryogenic Temperatures down to 10 Millikelvins
      • First Demonstration of Optically-Controlled 650 V Power GaN HEMT with Ultrafast Switching Speed
      • Dynamic Stability and Reliability of Multi-Kilovolt GaN Monolithic Bidirectional HEMT
      • First Characterization of GaN Power Device and IC at Deep Cryogenic Temperatures down to 100 mK
      • Robust Avalanche (1.5 kV, 2 kA/cm2) in Vertical GaN Diodes on Patterned Sapphire Substrate
      • Reliability of NiO/β-Ga2O3 bipolar heterojunction

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