News & Media Coverage

Novel 150 mm SiC engineered substrates, produced using dummy-grade material reuse, unlock the door to cost-effective manufacture of 1200 V SiC MOSFETs.

Cutting-edge power devices are performing in the coldest environments ever tested, unlocking new possibilities for space exploration, quantum computing, and energy systems.

Advances in semiconductor and power electronics technologies, led by increasing deployment of wide-bandgap power devices, are essential for reducing greenhouse gas emissions and developing a carbon-neutral energy system by 2050

Researchers based in USA and Japan report the demonstration of more than 10kV enhancement-mode (E-mode) gallium oxide (Ga2O3) lateral junction field-effect transistors (JFETs) with nickel oxide (NiO) reduced-surface-field (RESURF) structures and hybrid-drain, operating up to 250°C