Gallium oxide JFETs reach beyond 10kV breakdown

Feb 13, 2025 1 min read

Researchers based in USA and Japan report the demonstration of more than 10kV enhancement-mode (E-mode) gallium oxide (Ga2O3) lateral junction field-effect transistors (JFETs) with nickel oxide (NiO) reduced-surface-field (RESURF) structures and hybrid-drain, operating up to 250°C

“Gallium oxide JFETs reach beyond 10kV breakdown,” Semiconductor Today

Yuhao Zhang
Yuhao Zhang
Professor of Department of Electrical and Electronic Engineering