Publications

In-situ Measurement and Physical Mechanism of Dynamic RON in GaN-on-Si Monolithic Half-Bridge Power IC
Aug 2025·IEEE Transactions on Power Electronics
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In-situ Measurement and Physical Mechanism of Dynamic RON in GaN-on-Si Monolithic Half-Bridge Power IC
Plasma-free etched b-ga2o3-nio merged pin schottky diode with high-voltage stress reliability (pending)
A semiconductor device includes a layered structure forming multiple carrier channels extending in parallel at different depths of the …
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First Characterization of Si IGBT, SiC MOSFET, and GaN HEMT at Deep Cryogenic Temperatures down to 10 Millikelvins
Aug 2025·IEEE Transactions on Power Electronics
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First Characterization of Si IGBT, SiC MOSFET, and GaN HEMT at Deep Cryogenic Temperatures down to 10 Millikelvins
Termination structures for semiconductor devices (pending)
A process for forming a device can include forming a first semiconductor region having a first conductivity type. The process can …
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Termination structures for semiconductor devices (pending)
First Demonstration of Optically-Controlled 650 V Power GaN HEMT with Ultrafast Switching Speed
Jun 2025·In 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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First Demonstration of Optically-Controlled 650 V Power GaN HEMT with Ultrafast Switching Speed
Switching Reliability of NiO/Ga2O3 Bipolar Junction Evaluated by a Circuit Method
Jun 2025·In 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Switching Reliability of NiO/Ga2O3 Bipolar Junction Evaluated by a Circuit Method
Dynamic Stability and Reliability of Multi-Kilovolt GaN Monolithic Bidirectional HEMT
Jun 2025·In 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Dynamic Stability and Reliability of Multi-Kilovolt GaN Monolithic Bidirectional HEMT
Dynamic Reliability of IC-Interface GaN HEMTs Demonstrated Under Ultra-Fast (ns), High-Frequency (MHz) Gate Overvoltage Stress (>30V)
Jun 2025·In 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Dynamic Reliability of IC-Interface GaN HEMTs Demonstrated Under Ultra-Fast (ns), High-Frequency (MHz) Gate Overvoltage Stress (>30V)
Robust Avalanche (1.5 kV, 2 kA/cm2) in Vertical GaN Diodes on Patterned Sapphire Substrate
May 2025·IEEE Electron Device Letters
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Robust Avalanche (1.5 kV, 2 kA/cm2) in Vertical GaN Diodes on Patterned Sapphire Substrate
Optically-Controlled 3.3 kV SiC MOSFET with Fast Switching Speed and Low Optical Power
May 2025·In 2025 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Optically-Controlled 3.3 kV SiC MOSFET with Fast Switching Speed and Low Optical Power
First Characterization of GaN Power Device and IC at Deep Cryogenic Temperatures down to 100 mK
May 2025·In 2025 IEEE Applied Power Electronics Conference and Exposition (APEC)
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First Characterization of GaN Power Device and IC at Deep Cryogenic Temperatures down to 100 mK
Enhancement-mode GaN Monolithic Bidirectional Switch with Breakdown Voltage over 3.3 kV
Apr 2025·IEEE Electron Device Letters
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Enhancement-mode GaN Monolithic Bidirectional Switch with Breakdown Voltage over 3.3 kV
Impact of Substrate Bias on the Stability of Bidirectional GaN HEMT in Hard-and Soft-Switching
Mar 2025·In 2025 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Impact of Substrate Bias on the Stability of Bidirectional GaN HEMT in Hard-and Soft-Switching
Power Schottky barrier diodes with high breakdown voltage and low leakage current
This disclosure provides a diode including a semiconductor region having at least one two-dimensional carrier channel of a first …
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Power Schottky barrier diodes with high breakdown voltage and low leakage current
Wide-bandgap semiconductors and power electronics as pathways to carbon neutrality
Jan 2025·Nature Review Electrical Engineering
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Wide-bandgap semiconductors and power electronics as pathways to carbon neutrality
Junction-based deep mesa termination for multi-kilovolt vertical β-Ga2O3 power devices
Jan 2025·Applied Physics Letters
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Junction-based deep mesa termination for multi-kilovolt vertical β-Ga2O3 power devices
Reliability of NiO/β-Ga2O3 bipolar heterojunction
Jan 2025·Applied Physics Letters
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Reliability of NiO/β-Ga2O3 bipolar heterojunction
Charge balanced power Schottky barrier diodes
This disclosure provides a diode including a semiconductor region having at least one two-dimensional carrier channel of a first …
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Charge balanced power Schottky barrier diodes
Stability Improvement of GaN Power HEMT by a Multi-Functional Monolithic Protection Circuit
Dec 2024·IEEE Transactions on Power Electronics
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Stability Improvement of GaN Power HEMT by a Multi-Functional Monolithic Protection Circuit
Charge balanced power transistors (pending)
A semiconductor device includes a semiconductor region having at least one two-dimensional carrier channel of a first conductivity …
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Charge balanced power transistors (pending)
Heterogeneous superjunction devices (pending)
A device may include a substrate of a first conductivity type, the first conductivity type being one of a n-type conductivity and a …
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Heterogeneous superjunction devices (pending)
Monolithic cascode multi-channel high electron mobility transistors (pending)
This disclosure provides semiconductor device including a first transistor with a first gate terminal, a first source terminal, and the …
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Monolithic cascode multi-channel high electron mobility transistors (pending)
ß-Ga2O3 Junction Barrier Schottky (JBS) Diodes with Sputtered p-Type NiO (pending)
A self-aligned lithography process for the fabrication of an electronic device having predefined areas of a second semiconductor …
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ß-Ga2O3 Junction Barrier Schottky (JBS) Diodes with Sputtered p-Type NiO (pending)
Gallium Oxide Planar MOS-Schottky Rectifier (pending)
A semiconductor device includes a layered structure forming multiple carrier channels extending in parallel at different depths of the …
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Gallium Oxide Planar MOS-Schottky Rectifier (pending)
High electron mobility transistors with charge compensation
A variety of high electron mobility transistor structures are provided having charge compensation regions that can extend below the …
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High electron mobility transistors with charge compensation
Heterogeneous termination structures for semiconductor devices (pending)
A device may include a first semiconductor region of a first conductivity type having a top surface and being formed of a first …
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Heterogeneous termination structures for semiconductor devices (pending)
Semiconductor device with multiple carrier channels
A semiconductor device includes a layered structure forming multiple carrier channels including at least one n-type channel formed in a …
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Semiconductor device with multiple carrier channels
Enhancement-mode transistors with increased threshold voltage
A field effect transistor that has a source, a drain, a gate, a semiconductor region, and a dielectric region. The dielectric region is …
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Enhancement-mode transistors with increased threshold voltage
Semiconductor device with multiple-functional barrier layer
A semiconductor device includes a semiconductor structure forming a carrier channel, a barrier layer arranged in proximity with the …
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Semiconductor device with multiple-functional barrier layer
Semiconductor device with multiple carrier channels
A semiconductor device includes a layered structure forming multiple carrier channels extending in parallel at different depths of the …
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Semiconductor device with multiple carrier channels