Publications

In-situ Measurement and Physical Mechanism of Dynamic RON in GaN-on-Si Monolithic Half-Bridge Power IC
Dynamic on-resistance (RON) is a critical stability concern for GaN high-electron mobility transistors (HEMTs). In GaN monolithic …
DOI
In-situ Measurement and Physical Mechanism of Dynamic RON in GaN-on-Si Monolithic Half-Bridge Power IC
First Characterization of Si IGBT, SiC MOSFET, and GaN HEMT at Deep Cryogenic Temperatures down to 10 Millikelvins
Electrical energy conversion at deep cryogenic temperatures (T < 4.2 K) is highly desirable for applications in space exploration, …
DOI
First Characterization of Si IGBT, SiC MOSFET, and GaN HEMT at Deep Cryogenic Temperatures down to 10 Millikelvins
First Demonstration of Optically-Controlled 650 V Power GaN HEMT with Ultrafast Switching Speed
Optically-controlled power devices offer a promising solution for reducing electromagnetic interference and enhancing device …
DOI
First Demonstration of Optically-Controlled 650 V Power GaN HEMT with Ultrafast Switching Speed
Switching Reliability of NiO/Ga2O3 Bipolar Junction Evaluated by a Circuit Method
Ultra-wide bandgap (UWBG) NiO/Ga2O3 bipolar junction has emerged as a critical building block for diverse Ga2O3 power devices, owing to …
Dynamic Stability and Reliability of Multi-Kilovolt GaN Monolithic Bidirectional HEMT
GaN monolithic bidirectional switch (MBDS) has the potential to enable revolutionary advances in AC power conversion. Despite the …
PDF DOI
Dynamic Stability and Reliability of Multi-Kilovolt GaN Monolithic Bidirectional HEMT
Dynamic Reliability of IC-Interface GaN HEMTs Demonstrated Under Ultra-Fast (ns), High-Frequency (MHz) Gate Overvoltage Stress (>30V)
The small gate overvoltage margin is of real concern in p-gate GaN HEMTs in converter applications. Recently, ICeGaN® (Integrated …
DOI
Dynamic Reliability of IC-Interface GaN HEMTs Demonstrated Under Ultra-Fast (ns), High-Frequency (MHz) Gate Overvoltage Stress (>30V)
Robust Avalanche (1.5 kV, 2 kA/cm2) in Vertical GaN Diodes on Patterned Sapphire Substrate
The lack of avalanche capability is a key limitation of current lateral GaN devices. Despite the report of avalanche in vertical …
DOI
Robust Avalanche (1.5 kV, 2 kA/cm2) in Vertical GaN Diodes on Patterned Sapphire Substrate
Optically-Controlled 3.3 kV SiC MOSFET with Fast Switching Speed and Low Optical Power
Optically-controlled high-voltage power devices hold good promise for grid and renewable energy applications by providing superior …
DOI
Optically-Controlled 3.3 kV SiC MOSFET with Fast Switching Speed and Low Optical Power
First Characterization of GaN Power Device and IC at Deep Cryogenic Temperatures down to 100 mK
DOI
First Characterization of GaN Power Device and IC at Deep Cryogenic Temperatures down to 100 mK
Enhancement-mode GaN Monolithic Bidirectional Switch with Breakdown Voltage over 3.3 kV
Energy supply and consumption account for approximately 75% of global greenhouse gas emissions. Advances in semiconductor and power …
DOI
Enhancement-mode GaN Monolithic Bidirectional Switch with Breakdown Voltage over 3.3 kV
Impact of Substrate Bias on the Stability of Bidirectional GaN HEMT in Hard-and Soft-Switching
Many power electronics circuits for DC/AC conversion require power semiconductors with bidirectional voltage-blocking capability. Such …
DOI
Impact of Substrate Bias on the Stability of Bidirectional GaN HEMT in Hard-and Soft-Switching
Wide-bandgap semiconductors and power electronics as pathways to carbon neutrality
Energy supply and consumption account for approximately 75% of global greenhouse gas emissions. Advances in semiconductor and power …
DOI
Wide-bandgap semiconductors and power electronics as pathways to carbon neutrality
Junction-based deep mesa termination for multi-kilovolt vertical β-Ga2O3 power devices
Deep mesa is an effective edge termination widely deployed in high-voltage power devices. However, its effectiveness requires the …
DOI
Junction-based deep mesa termination for multi-kilovolt vertical β-Ga2O3 power devices
Reliability of NiO/β-Ga2O3 bipolar heterojunction
Ultra-wide bandgap (UWBG) NiO/β-Ga2O3 p–n junction has recently emerged as a key building block for emerging electronic and …
Stability Improvement of GaN Power HEMT by a Multi-Functional Monolithic Protection Circuit
This work presents a gate electrostatic discharge (ESD) protection circuit monolithically integrated with the GaN power …
DOI
Stability Improvement of GaN Power HEMT by a Multi-Functional Monolithic Protection Circuit