Article-Journal

In-situ Measurement and Physical Mechanism of Dynamic RON in GaN-on-Si Monolithic Half-Bridge Power IC
Aug 2025·IEEE Transactions on Power Electronics
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In-situ Measurement and Physical Mechanism of Dynamic RON in GaN-on-Si Monolithic Half-Bridge Power IC
First Characterization of Si IGBT, SiC MOSFET, and GaN HEMT at Deep Cryogenic Temperatures down to 10 Millikelvins
Aug 2025·IEEE Transactions on Power Electronics
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First Characterization of Si IGBT, SiC MOSFET, and GaN HEMT at Deep Cryogenic Temperatures down to 10 Millikelvins
Robust Avalanche (1.5 kV, 2 kA/cm2) in Vertical GaN Diodes on Patterned Sapphire Substrate
May 2025·IEEE Electron Device Letters
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Robust Avalanche (1.5 kV, 2 kA/cm2) in Vertical GaN Diodes on Patterned Sapphire Substrate
Enhancement-mode GaN Monolithic Bidirectional Switch with Breakdown Voltage over 3.3 kV
Apr 2025·IEEE Electron Device Letters
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Enhancement-mode GaN Monolithic Bidirectional Switch with Breakdown Voltage over 3.3 kV
Junction-based deep mesa termination for multi-kilovolt vertical β-Ga2O3 power devices
Jan 2025·Applied Physics Letters
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Junction-based deep mesa termination for multi-kilovolt vertical β-Ga2O3 power devices
Wide-bandgap semiconductors and power electronics as pathways to carbon neutrality
Jan 2025·Nature Review Electrical Engineering
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Wide-bandgap semiconductors and power electronics as pathways to carbon neutrality
Reliability of NiO/β-Ga2O3 bipolar heterojunction
Jan 2025·Applied Physics Letters
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Reliability of NiO/β-Ga2O3 bipolar heterojunction
Stability Improvement of GaN Power HEMT by a Multi-Functional Monolithic Protection Circuit
Dec 2024·IEEE Transactions on Power Electronics
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Stability Improvement of GaN Power HEMT by a Multi-Functional Monolithic Protection Circuit