Paper-Conference

First Demonstration of Optically-Controlled 650 V Power GaN HEMT with Ultrafast Switching Speed
Optically-controlled power devices offer a promising solution for reducing electromagnetic interference and enhancing device …
DOI
First Demonstration of Optically-Controlled 650 V Power GaN HEMT with Ultrafast Switching Speed
Dynamic Reliability of IC-Interface GaN HEMTs Demonstrated Under Ultra-Fast (ns), High-Frequency (MHz) Gate Overvoltage Stress (>30V)
The small gate overvoltage margin is of real concern in p-gate GaN HEMTs in converter applications. Recently, ICeGaN® (Integrated …
DOI
Dynamic Reliability of IC-Interface GaN HEMTs Demonstrated Under Ultra-Fast (ns), High-Frequency (MHz) Gate Overvoltage Stress (>30V)
Dynamic Stability and Reliability of Multi-Kilovolt GaN Monolithic Bidirectional HEMT
GaN monolithic bidirectional switch (MBDS) has the potential to enable revolutionary advances in AC power conversion. Despite the …
PDF DOI
Dynamic Stability and Reliability of Multi-Kilovolt GaN Monolithic Bidirectional HEMT
Switching Reliability of NiO/Ga2O3 Bipolar Junction Evaluated by a Circuit Method
Ultra-wide bandgap (UWBG) NiO/Ga2O3 bipolar junction has emerged as a critical building block for diverse Ga2O3 power devices, owing to …
First Characterization of GaN Power Device and IC at Deep Cryogenic Temperatures down to 100 mK
DOI
First Characterization of GaN Power Device and IC at Deep Cryogenic Temperatures down to 100 mK
Optically-Controlled 3.3 kV SiC MOSFET with Fast Switching Speed and Low Optical Power
Optically-controlled high-voltage power devices hold good promise for grid and renewable energy applications by providing superior …
DOI
Optically-Controlled 3.3 kV SiC MOSFET with Fast Switching Speed and Low Optical Power
Impact of Substrate Bias on the Stability of Bidirectional GaN HEMT in Hard-and Soft-Switching
Many power electronics circuits for DC/AC conversion require power semiconductors with bidirectional voltage-blocking capability. Such …
DOI
Impact of Substrate Bias on the Stability of Bidirectional GaN HEMT in Hard-and Soft-Switching